Department: Electrical & Computer Engineering
Name: Vladimir A. Odnoblyudov
Email: vodnobly @ ucsd.edu
Grad Year: 2006
Yellow-red light emitting diodes (LEDs) are widely used in automotive, traffic lights, signage, signaling, backlighting, and in white light LEDs. Growth and fabrication of InGaNP quantum well based yellow-amber-red light-emitting diodes are reported. The significant simplicity of one-step growth process of InGaNP-based LEDs is an advantage over etch-removing of a GaAs absorbing substrate and wafer bonding to a GaP transparent substrate for conventional AlInGaP-based LEDs. Superior material properties of InGaNP as compared to conventional AlInGaP, combined with a simplified fabrication process, promise the factor of 8 increase in lumens per dollar. In this work, the optical properties of InGaNP quantum wells grown on GaP(100) substrates were studied. Single and multiple quantum well - based LED structures were grown, and LED chips were fabricated, packaged and characterized. Influence of the AlGaP cladding layer on LED performance has been studied.
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